unisonic technologies co., ltd 5n80 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-483.b 5 amps, 800 volts n-channel power mosfet ? description the utc 5n80 is a n-channel enhancement mode power mosfet. it use utc advanced technology to provide avalanche rugged technology and low gate charge. it can be applied in high current, high speed switching, switch mode power supplies (smps), consumer and industrial lighting, dc-ac inverters for welding equipment and uninterruptible power supply(ups). ? features * r ds(on) :1.8 ? (typ.) * avalanche rugged technology * low input capacitance * low gate charge * application oriented characterization ? symbol 1.gate 3.source 2.drain to-220 to-220f 1 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 5N80L-TA3-T 5n80g-ta3-t to-220 g d s tube 5n80l-tf3-t 5n80g-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
5n80 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-483.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v gs =0 v ds 800 v gate-source voltage v gs 30 v drain-gate voltage r gs =20k ? v dgr 800 v continuous i d 5.5 a drain current (continuous) pulsed (note 2) i dm 20 a avalanche energy single pulsed (note 3) e as 320 mj to-220 125 w power dissipation to-220f p d 40 w to-220 1 derating factor to-220f 0.32 w/c junction temperature t j 150 c storage temperature t stg -65~150 c notes : absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit to-220 62.5 junction to ambient to-220f ja 62.5 c/w to-220 1 junction to case to-220f jc 3.12 c/w
5n80 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-483.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 800 v v ds =max rating 250 drain-source leakage current i dss v ds = max rating 0.8, t c =125c 1000 a forward v gs =+20v +100 na gate- source leakage current reverse i gss v gs =-20v -100 na on characteristics (note 1) gate threshold voltage v gs(th) v ds =v gs , i d =250a 3 5 v v gs =10v, i d =2.5a 1.8 2.6 static drain-source on-state resistance r ds(on) v gs =10v, i d =2.5a, t c =100c 4 ? on state drain current i d(on) v ds >i d(on) r ds(on) max, v gs =10v 5 a forward transconductance (note 1) g fs v ds >i d(on) r ds(on) max, i d =2.5a 2 4 s dynamic parameters input capacitance c iss 1190 1450 pf output capacitance c oss 165 200 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 70 85 pf switching parameters total gate charge q g 75 95 nc gate to source charge q gs 9 nc gate to drain charge q gd v gs =10v, v dd =500v, i d =6a 33 nc turn-on delay time t d(on) 50 65 ns rise time t r v dd =400v, i d =2.5a, r g =50 ? v gs =10v (see test circuit, fig. 3) 85 105 ns turn-off delay time t d(off) 120 150 ns fall-time t f 30 40 ns cross-over time t c v dd =640v, i d =5.5a, r g =50 ? v gs =10v (see test circuit, fig. 5) 160 200 ns turn-on current slope (di/dt) on v dd =640v, i d =5.5a, r g =50 ? v gs =10v (see test circuit, fig. 5) 200 a/s source- drain diode ratings and characteristics drain-source diode forward voltage (note 1) v sd i sd =5.5a, v gs =0v 2 v reverse recovery time t rr 700 ns reverse recovery charge q rr 7.7 nc reverse recovery current i rrm i sd =5.5a,di/dt=100a/s, v dd =80v,t j =150c (see test circuit, fig. 5) 22 a source-drain current i sd 5.5 a source-drain current (pulsed) (note 1) i sdm 20 a notes: 1. pulsed: pulse duration=300s, duty cycle 1.5%. 2. pulse width limited by safe operating area. 3. starting t j =25c, i d =i ar , v dd =50v
5n80 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-483.b ? switching time test circuit v i p w 2200f 3.3f v dd d. u. t. l v d i d fig. 1 unclamped inductive load test circuits fig. 2 unclamped inductive waveforms v dd v (br)dss v d i dm i d v dd 1000f 3.3f v dd d. u. t. l=100h fig. 5 test circuit for inductive load switching and diode reverse recovery time a b d g s 85 b fast diode + - r g a mos diode a b s d g 25
5n80 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-483.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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